GAAS MESFET AS A PULSE REGENERATOR, AMPLIFIER, AND LASER MODULATOR IN GBIT-S RANGE

被引：17

作者：

FILENSKY, W ^{[1
]}

KLEIN, HJ ^{[1
]}

BENEKING, H ^{[1
]}

机构：

[1] RHEIN WESTFAL TH,INST SEMICOND ELECTR,D-5100 AACHEN,FED REP GER

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1977年 / 12卷 / 03期

关键词：

D O I：

10.1109/JSSC.1977.1050891

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：276 / 280

页数：5

共 13 条

[1] GAAS MESFET AS A PULSE REGENERATOR IN GIGABIT PER 2ND RANGE [J].

BENEKING, H ;

FILENSKY, W .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1976, 24 (06) :385-386

[2]

BENEKING H, 1976, IEEE INT S MICROWAVE, P158

[3] DYNAMIC BEHAVIOR OF SEMICONDUCTOR LASERS [J].

BOERS, PM ;

VLAARDINGERBROEK, MT .

ELECTRONICS LETTERS, 1975, 11 (10) :206-208

[4]

BOSCH BG, 1976, IEEE INT S MICROWAVE, P172

[5] THEORETICAL-ANALYSIS FOR GIGABIT - 2ND PULSE CODE MODULATION OF SEMICONDUCTOR-LASERS [J].

DANIELSEN, M .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1976, 12 (11) :657-660

[6]

DIPIETRO DM, 1975, INT SOLID STATE CIRC, P118

[7]

KOHN E, 1975, NACHRICHTENTECH Z, V28, P287

[8] HIGH-SPEED 1 MUM GAAS MESFET [J].

KOHN, E ;

WULLER, R ;

STAHLMANN, R ;

BENEKING, H .

ELECTRONICS LETTERS, 1975, 11 (08) :171-172

[9]

KOHN E, 4TH EUR SOL STAT DEV

[10] MICROWAVE FIELD-EFFECT TRANSISTORS 1976 [J].

LIECHTI, CA .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1976, 24 (06) :279-330

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