DYNAMIC BEHAVIOR OF SEMICONDUCTOR LASERS

[1] Adams M. J., 1973, Opto-Electronics, V5, P201, DOI 10.1007/BF01414739

[2] DANIELSEN M, TO BE PUBLISHED

[3] Dunsmuir R., 1961, J ELECTRON CONTR, V10, P453

[4] CW DEGRADATION AT 300 DEGREES K OF GAAS DOUBLE-HETEROSTRUCTURE JUNCTION LASERS .2. ELECTRONIC GAIN [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (09) : 4113 - 4119

[5] LARGE-SIGNAL DIRECT MODULATION OF INJECTION LASERS [J]. ELECTRONICS LETTERS, 1973, 9 (22) : 532 - 533

[6] IKEGAMI T, 1970, ELECTRON COMMUN JPN, V53, P82

[7] NEW METHOD FOR REDUCING PATTERN EFFECT IN PCM CURRENT MODULATION OF DH-GAALAS LASERS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1973, QE 9 (11) : 1098 - 1101

[8] DIRECT MODULATION OF SEMICONDUCTOR LASERS [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1970, 58 (10): : 1457 - +

[9] ROSS D, 1966, LASER LICHTVERSTRKER

[10] RATE EQUATION APPROACH FOR DIODE LASERS .1. STEADY-STATE SOLUTIONS FOR A SINGLE DIODE [J]. OPTO-ELECTRONICS, 1974, 6 (06): : 451 - 456

[1] Adams M. J., 1973, Opto-Electronics, V5, P201, DOI 10.1007/BF01414739

[2] DANIELSEN M, TO BE PUBLISHED

[3] Dunsmuir R., 1961, J ELECTRON CONTR, V10, P453

[4] CW DEGRADATION AT 300 DEGREES K OF GAAS DOUBLE-HETEROSTRUCTURE JUNCTION LASERS .2. ELECTRONIC GAIN [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (09) : 4113 - 4119

[5] LARGE-SIGNAL DIRECT MODULATION OF INJECTION LASERS [J]. ELECTRONICS LETTERS, 1973, 9 (22) : 532 - 533

[6] IKEGAMI T, 1970, ELECTRON COMMUN JPN, V53, P82

[7] NEW METHOD FOR REDUCING PATTERN EFFECT IN PCM CURRENT MODULATION OF DH-GAALAS LASERS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1973, QE 9 (11) : 1098 - 1101

[8] DIRECT MODULATION OF SEMICONDUCTOR LASERS [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1970, 58 (10): : 1457 - +

[9] ROSS D, 1966, LASER LICHTVERSTRKER

[10] RATE EQUATION APPROACH FOR DIODE LASERS .1. STEADY-STATE SOLUTIONS FOR A SINGLE DIODE [J]. OPTO-ELECTRONICS, 1974, 6 (06): : 451 - 456