CW DEGRADATION AT 300 DEGREES K OF GAAS DOUBLE-HETEROSTRUCTURE JUNCTION LASERS .2. ELECTRONIC GAIN

被引：283

作者：

HAKKI, BW ^{[1
]}

PAOLI, TL ^{[1
]}

机构：

[1] BELL LABS,MURRAY HILL,NJ 07974

来源：

关键词：

D O I：

10.1063/1.1662905

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4113 / 4119

页数：7

共 18 条

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[2] BIARD JR, 1966, INT S GALLIUM ARSENI, P113
[3] BYER NE, 1969, IEEE J QUANTUM ELECT, VQE 5, P424
[4] DELOACH BC, TO BE PUBLISHED
[5] GORDON EI, 1964, BELL SYST TECH J, V43, P1
[6] ATOMES A IINTERIEUR DUN INTERFEROMETRE PEROT-FABRY
KASTLER, A
[J]. APPLIED OPTICS, 1962, 1 (01) : 17 - 24
[7] DELAY BETWEEN CURRENT PULSE + LIGHT EMISSION OF GALLIUM ARSENIDE INJECTION LASER ( RISE-TIME LESS THAN 0.2 NSEC 77 DEGREES K E )
KONNERTH, K
LANZA, C
[J]. APPLIED PHYSICS LETTERS, 1964, 4 (07) : 120 - &
[8] KRESSEL H, 1971, RCA REV, V32, P393
[9] PHYSICAL BASIS OF NONCATASTROPHIC DEGRADATION IN GAAS INJECTION LASERS
KRESSEL, H
BYER, NE
[J]. PROCEEDINGS OF THE IEEE, 1969, 57 (01) : 25 - &
[10] Mettler K., 1972, SIEMENS FORSCH ENTW, V1, P274