PHYSICAL BASIS OF NONCATASTROPHIC DEGRADATION IN GAAS INJECTION LASERS

被引:46
作者
KRESSEL, H
BYER, NE
机构
[1] RCA Laboratories, David Sarnoff Research Center, Princeton., N.J.
关键词
D O I
10.1109/PROC.1969.6865
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A study was made of the gradual degradation in the output of GaAs injection lasers in the course of operation at 300°K and below. The degradation process was found to be a bulk, rather than a surface, effect during which the near-field emission patterns decrease in uniformity. Except in rare cases, there is no external evidence of mechanical damage to the de-vices. This has been confirmed by scanning electron microscopy observations of the facets before and after gradual degradation. Softening of the I-V characteristics occurs in addition to increases in the threshold current density and decreases in both the stimulated and the spontaneous exterior differential efliciency. No evidence was found for significant changes in either the junction impurity profile or the optical emission spectra. From a detailed analysis of the change in the threshold currents and the efHeiency it is concluded that the internal quantum efliciency is gradually reduced during laser operation. This decrease is primarily attributed to the formation of recombination centers in the recombination region. In addition, the optical loss is increased in some lasers. An evaluation of the factors affecting the degradation rate indicates that it is a superlinear function of the current density of operation. Furthermore, the degradation rate is strongly influenced by the initial junction quality—lasers quality—lasers which initially exihbit highly nonuniform emission patterns degrade faster than those which are relatively uniform. Copyright © 1969 by The Institute of Electrical and Electronics Engineers, Inc.
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页码:25 / &
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