PERMANENT DEGRADATION OF GAAS TUNNEL DIODES

[1] BAUERLEIN R, 1959, Z NATURFOR, VA 14, P1069

[2] EVIDENCE FOR EXISTENCE OF HIGH CONCENTRATIONS OF LATTICE DEFECTS IN GAAS [J]. PHYSICAL REVIEW LETTERS, 1962, 9 (06) : 252 - &

[3] REVERSIBLE DEGRADATION EFFECTS IN GASB TUNNEL DIODES [J]. SOLID-STATE ELECTRONICS, 1962, 5 (JUL-A) : 261 - 263

[4] EXCESS TUNNEL CURRENT IN SILICON ESAKI JUNCTIONS [J]. PHYSICAL REVIEW, 1961, 121 (03): : 684 - &

[5] DAY JC, 1961, APR I RAD ENG C

[6] GOLD RD, 1961, T I RADIO ENG ED, V8, P428

[7] GOLD RD, 1961, B AM PHYS SOC, V6, P312

[8] GRIGOREV NN, 1961, OPT SPECTROSC, V10, P412

[9] HALL RN, 1962, B AM PHYS SOC, V7, P234

[10] HENKEL HJ, 1962, Z NATURFORSCH PT A, VA 17, P358

[1] BAUERLEIN R, 1959, Z NATURFOR, VA 14, P1069

[2] EVIDENCE FOR EXISTENCE OF HIGH CONCENTRATIONS OF LATTICE DEFECTS IN GAAS [J]. PHYSICAL REVIEW LETTERS, 1962, 9 (06) : 252 - &

[3] REVERSIBLE DEGRADATION EFFECTS IN GASB TUNNEL DIODES [J]. SOLID-STATE ELECTRONICS, 1962, 5 (JUL-A) : 261 - 263

[4] EXCESS TUNNEL CURRENT IN SILICON ESAKI JUNCTIONS [J]. PHYSICAL REVIEW, 1961, 121 (03): : 684 - &

[5] DAY JC, 1961, APR I RAD ENG C

[6] GOLD RD, 1961, T I RADIO ENG ED, V8, P428

[7] GOLD RD, 1961, B AM PHYS SOC, V6, P312

[8] GRIGOREV NN, 1961, OPT SPECTROSC, V10, P412

[9] HALL RN, 1962, B AM PHYS SOC, V7, P234

[10] HENKEL HJ, 1962, Z NATURFORSCH PT A, VA 17, P358