DIRECT MODULATION OF SEMICONDUCTOR LASERS

被引:90
作者
PAOLI, TL
RIPPER, JE
机构
来源
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS | 1970年 / 58卷 / 10期
关键词
D O I
10.1109/PROC.1970.7971
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1457 / +
页数:1
相关论文
共 96 条
[1]  
ALFEROV ZI, 1970, SOV PHYS SEMICOND+, V3, P1103
[2]  
Basov N. G., 1969, Zhurnal Eksperimental'noi i Teoreticheskoi Fiziki, V57, P617
[3]   DYNAMICS OF INJECTION LASERS [J].
BASOV, NG .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1968, QE 4 (11) :855-+
[4]   A GALLIUM ARSENIDE LASER ARRAY FOR COMMUNICATIONS [J].
BIRBECK, FE .
JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1968, 1 (07) :788-&
[5]   SEMICONDUCTOR LASER COMMUNICATIONS THROUGH MULTIPLE-SCATTER PATHS [J].
CHATTERT.EJ .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (12) :2114-&
[6]   OPTICAL COMMUNICATIONS EMPLOYING INFRARED EMITTING DIODES AND FM TECHNIQUES [J].
CHATTERTON, EJ .
PROCEEDINGS OF THE IEEE, 1963, 51 (04) :612-&
[7]   SOLID-STATE ROOM-TEMPERATURE OPERATED GAAS LASER TRANSMITTER [J].
DALRYMPLE, GF ;
QUIST, TM ;
GOLDSTEIN, BS .
PROCEEDINGS OF THE IEEE, 1964, 52 (12) :1742-&
[8]   CONTINUOUS MICROWAVE OSCILLATIONS IN GAAS JUNCTION LASERS [J].
DASARO, LA ;
CHERLOW, JM .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1968, QE 4 (04) :164-+
[9]   PERFORMANCE OF ROOM TEMPERATURE GAAS LASERS AT HIGH PULSE REPETITION RATES (50 KC/S) [J].
DOUSMANIS, GC ;
GROSS, HE .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (07) :998-+
[10]  
DROZHBIN YA, 1967, JETP LETT, V5, P143