PERFORMANCE OF ROOM TEMPERATURE GAAS LASERS AT HIGH PULSE REPETITION RATES (50 KC/S)

被引:5
作者
DOUSMANIS, GC
GROSS, HE
机构
来源
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS | 1966年 / 54卷 / 07期
关键词
D O I
10.1109/PROC.1966.4962
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:998 / +
页数:1
相关论文
共 3 条
[1]   TEMPERATURE DEPENDENCE OF THRESHOLD CURRENT IN GAAS LASERS ( EPITAXIAL HEAVIER DOPED UNITS FOR LOW THRESHOLD )4 TIMES 104 A/CM2 ) AT 300 DEGREES K 4.2 DEGREES TO 300 DEGREES K E/T ) [J].
DOUSMANIS, GC ;
STAEBLER, DL ;
NELSON, H .
APPLIED PHYSICS LETTERS, 1964, 5 (09) :174-&
[2]   HIGH-EFFICIENCY INJECTION LASER AT ROOM TEMPERATURE [J].
NELSON, H ;
DOUSMANIS, GC ;
HAWRYLO, F ;
RENO, C ;
PANKOVE, JI .
PROCEEDINGS OF THE IEEE, 1964, 52 (11) :1360-+
[3]  
NELSON H, 1963, RCA REV, V24, P603