ELECTROLYTIC ETCHING AND ELECTRON-MOBILITY OF GAAS FOR FETS

[1] SI AND GAAS 0.5 MUM-GATE SCHOTTKY-BARRIER FIELD-EFFECT TRANSISTORS [J]. ELECTRONICS LETTERS, 1973, 9 (10) : 232 - 234

[2] BAECHTOLD W, 1973, P INT SOLID ST CIRCU, V16, P156

[3] BECHTEL NG, 1972, MICROWAVE J, V15

[4] VAPOR GROWTH OF EPITAXIAL GAAS - SUMMARY OF PARAMETERS WHICH INFLUENCE PURITY AND MORPHOLOGY OF EPITAXIAL LAYERS [J]. JOURNAL OF CRYSTAL GROWTH, 1972, 17 (DEC) : 189 - +

[5] FAIR RB, UNPUBLISHED

[6] FUKUTA M, 1973, P INT SOLID ST CIRCU, V16, P84

[7] HOWER PL, 1971, SEMICONDUCTORS SEM A, V7, P147

[8] ANODIC-OXIDATION OF GAAS IN AQUEOUS H2O2 SOLUTION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (10) : 1385 - 1390

[9] NAPOLI LS, 1973, P INT SOLID ST CIRCU, V16, P82

[10] ELECTRON MOBILITY IN GE, SI, AND GAP [J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1972, 53 (01): : 245 - +

[1] SI AND GAAS 0.5 MUM-GATE SCHOTTKY-BARRIER FIELD-EFFECT TRANSISTORS [J]. ELECTRONICS LETTERS, 1973, 9 (10) : 232 - 234

[2] BAECHTOLD W, 1973, P INT SOLID ST CIRCU, V16, P156

[3] BECHTEL NG, 1972, MICROWAVE J, V15

[4] VAPOR GROWTH OF EPITAXIAL GAAS - SUMMARY OF PARAMETERS WHICH INFLUENCE PURITY AND MORPHOLOGY OF EPITAXIAL LAYERS [J]. JOURNAL OF CRYSTAL GROWTH, 1972, 17 (DEC) : 189 - +

[5] FAIR RB, UNPUBLISHED

[6] FUKUTA M, 1973, P INT SOLID ST CIRCU, V16, P84

[7] HOWER PL, 1971, SEMICONDUCTORS SEM A, V7, P147

[8] ANODIC-OXIDATION OF GAAS IN AQUEOUS H2O2 SOLUTION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (10) : 1385 - 1390

[9] NAPOLI LS, 1973, P INT SOLID ST CIRCU, V16, P82

[10] ELECTRON MOBILITY IN GE, SI, AND GAP [J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1972, 53 (01): : 245 - +