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ANODIC-OXIDATION OF GAAS IN AQUEOUS H2O2 SOLUTION
被引:116
作者
:
LOGAN, RA
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS,MURRAY HILL,NJ 07974
BELL TEL LABS,MURRAY HILL,NJ 07974
LOGAN, RA
[
1
]
SCHWARTZ, B
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS,MURRAY HILL,NJ 07974
BELL TEL LABS,MURRAY HILL,NJ 07974
SCHWARTZ, B
[
1
]
SUNDBURG, WJ
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS,MURRAY HILL,NJ 07974
BELL TEL LABS,MURRAY HILL,NJ 07974
SUNDBURG, WJ
[
1
]
机构
:
[1]
BELL TEL LABS,MURRAY HILL,NJ 07974
来源
:
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
|
1973年
/ 120卷
/ 10期
关键词
:
D O I
:
10.1149/1.2403267
中图分类号
:
O646 [电化学、电解、磁化学];
学科分类号
:
081704 ;
摘要
:
引用
收藏
页码:1385 / 1390
页数:6
相关论文
共 11 条
[1]
FIELD RC, PRIVATE COMMUNICATIO
[2]
DEGRADATION AND PASSIVATION OF GAP LIGHT-EMITTING DIODES
HARTMAN, RL
论文数:
0
引用数:
0
h-index:
0
HARTMAN, RL
SCHWARTZ, B
论文数:
0
引用数:
0
h-index:
0
SCHWARTZ, B
KUHN, M
论文数:
0
引用数:
0
h-index:
0
KUHN, M
[J].
APPLIED PHYSICS LETTERS,
1971,
18
(07)
: 304
-
&
[3]
GAAS-GAXAL1-XAS HETEROSTRUCTURE INJECTION LASERS WHICH EXHIBIT LOW THRESHOLDS AT ROOM TEMPERATURE
HAYASHI, I
论文数:
0
引用数:
0
h-index:
0
HAYASHI, I
PANISH, MB
论文数:
0
引用数:
0
h-index:
0
PANISH, MB
[J].
JOURNAL OF APPLIED PHYSICS,
1970,
41
(01)
: 150
-
&
[4]
PRELIMINARY RESULTS ON OXIDATION OF GAAS AND GAP DURING CHEMICAL ETCHING
SCHWARTZ, B
论文数:
0
引用数:
0
h-index:
0
SCHWARTZ, B
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1971,
118
(04)
: 657
-
&
[5]
SCHWARTZ B, 1972, J ELECTROCHEM SOC, V119, pC241
[6]
INFLUENCE OF DOPANT CONCENTRATION ON OXIDATION OF N-TYPE GAAS IN H2O
SCHWARTZ, B
论文数:
0
引用数:
0
h-index:
0
SCHWARTZ, B
HASZKO, SE
论文数:
0
引用数:
0
h-index:
0
HASZKO, SE
WONSIDLER, DR
论文数:
0
引用数:
0
h-index:
0
WONSIDLER, DR
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1971,
118
(07)
: 1229
-
+
[7]
SCHWARTZ B, 1972, 4 INT C GAAS REL COM
[8]
SCHWARTZ B, TO BE PUBLISHED
[9]
THE CHEMICAL POLISHING OF GALLIUM ARSENIDE IN BROMINE-METHANOL
SULLIVAN, MV
论文数:
0
引用数:
0
h-index:
0
SULLIVAN, MV
KOLB, GA
论文数:
0
引用数:
0
h-index:
0
KOLB, GA
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1963,
110
(06)
: 585
-
587
[10]
PREFERENTIAL ETCHING AND ETCHED PROFILE OF GAAS
TARUI, Y
论文数:
0
引用数:
0
h-index:
0
TARUI, Y
KOMIYA, Y
论文数:
0
引用数:
0
h-index:
0
KOMIYA, Y
HARADA, Y
论文数:
0
引用数:
0
h-index:
0
HARADA, Y
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1971,
118
(01)
: 118
-
&
←
1
2
→
共 11 条
[1]
FIELD RC, PRIVATE COMMUNICATIO
[2]
DEGRADATION AND PASSIVATION OF GAP LIGHT-EMITTING DIODES
HARTMAN, RL
论文数:
0
引用数:
0
h-index:
0
HARTMAN, RL
SCHWARTZ, B
论文数:
0
引用数:
0
h-index:
0
SCHWARTZ, B
KUHN, M
论文数:
0
引用数:
0
h-index:
0
KUHN, M
[J].
APPLIED PHYSICS LETTERS,
1971,
18
(07)
: 304
-
&
[3]
GAAS-GAXAL1-XAS HETEROSTRUCTURE INJECTION LASERS WHICH EXHIBIT LOW THRESHOLDS AT ROOM TEMPERATURE
HAYASHI, I
论文数:
0
引用数:
0
h-index:
0
HAYASHI, I
PANISH, MB
论文数:
0
引用数:
0
h-index:
0
PANISH, MB
[J].
JOURNAL OF APPLIED PHYSICS,
1970,
41
(01)
: 150
-
&
[4]
PRELIMINARY RESULTS ON OXIDATION OF GAAS AND GAP DURING CHEMICAL ETCHING
SCHWARTZ, B
论文数:
0
引用数:
0
h-index:
0
SCHWARTZ, B
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1971,
118
(04)
: 657
-
&
[5]
SCHWARTZ B, 1972, J ELECTROCHEM SOC, V119, pC241
[6]
INFLUENCE OF DOPANT CONCENTRATION ON OXIDATION OF N-TYPE GAAS IN H2O
SCHWARTZ, B
论文数:
0
引用数:
0
h-index:
0
SCHWARTZ, B
HASZKO, SE
论文数:
0
引用数:
0
h-index:
0
HASZKO, SE
WONSIDLER, DR
论文数:
0
引用数:
0
h-index:
0
WONSIDLER, DR
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1971,
118
(07)
: 1229
-
+
[7]
SCHWARTZ B, 1972, 4 INT C GAAS REL COM
[8]
SCHWARTZ B, TO BE PUBLISHED
[9]
THE CHEMICAL POLISHING OF GALLIUM ARSENIDE IN BROMINE-METHANOL
SULLIVAN, MV
论文数:
0
引用数:
0
h-index:
0
SULLIVAN, MV
KOLB, GA
论文数:
0
引用数:
0
h-index:
0
KOLB, GA
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1963,
110
(06)
: 585
-
587
[10]
PREFERENTIAL ETCHING AND ETCHED PROFILE OF GAAS
TARUI, Y
论文数:
0
引用数:
0
h-index:
0
TARUI, Y
KOMIYA, Y
论文数:
0
引用数:
0
h-index:
0
KOMIYA, Y
HARADA, Y
论文数:
0
引用数:
0
h-index:
0
HARADA, Y
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1971,
118
(01)
: 118
-
&
←
1
2
→