THE CHEMICAL POLISHING OF GALLIUM ARSENIDE IN BROMINE-METHANOL

被引：86

作者：

SULLIVAN, MV

KOLB, GA

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1963年 / 110卷 / 06期

关键词：

D O I：

10.1149/1.2425820

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

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页码：585 / 587

页数：3

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共 8 条

[1] TECHNOLOGY OF GALLIUM ARSENIDE
CUNNELL, FA
EDMOND, JT
HARDING, WR
[J]. SOLID-STATE ELECTRONICS, 1960, 1 (02) : 97 - &
[2] A POLISHING ETCHANT FOR III-V SEMICONDUCTORS
FULLER, CS
ALLISON, HW
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (09) : 880 - 880
[3] KLEIN DL, 1961, J ELECTROCHEM SOC, V108, pC60
[4] AN ELECTROPOLISHING TECHNIQUE FOR GERMANIUM AND SILICON
SULLIVAN, MV
KLEIN, DL
FINNE, RM
POMPLIANO, LA
KOLB, GA
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (05) : 412 - 419
[5] SULLIVAN MV, 1961, J ELECTROCHEM SOC, V108, pC60
[6] SULLIVAN MV, 1960, J ELECTROCHEM SOC, V107, pC191
[7] POLARITY OF GALLIUM ARSENIDE SINGLE CRYSTALS
WHITE, JG
ROTH, WC
[J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (06) : 946 - 947
[8] ACID CUTTING AND ACID POLISHING OF COPPER CRYSTALS
YOUNG, FW
WILSON, TR
[J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1961, 32 (05) : 559 - &