VAPOR GROWTH OF EPITAXIAL GAAS - SUMMARY OF PARAMETERS WHICH INFLUENCE PURITY AND MORPHOLOGY OF EPITAXIAL LAYERS

被引：130

作者：

DILORENZO, JV

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1972年 / 17卷 / DEC期

关键词：

D O I：

10.1016/0022-0248(72)90247-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：189 / +

页数：1

共 32 条

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