SI AND GAAS 0.5 MUM-GATE SCHOTTKY-BARRIER FIELD-EFFECT TRANSISTORS

被引：47

作者：

BAECHTOLD, W ^{[1
]}

DAETWYLE.K ^{[1
]}

FORSTER, T ^{[1
]}

MOHR, TO ^{[1
]}

WALTER, W ^{[1
]}

WOLF, P ^{[1
]}

机构：

[1] IBM CORP, ZURICH RES LAB, RUSCHLIKON 8803, SWITZERLAND

来源：

ELECTRONICS LETTERS | 1973年 / 9卷 / 10期

关键词：

D O I：

10.1049/el:19730168

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：232 / 234

页数：3

共 6 条

[1] X AND KU BAND GAAS MESFET [J].

BAECHTOLD, W ;

WOLF, P ;

WALTER, W .

ELECTRONICS LETTERS, 1972, 8 (02) :35-+

[2] IMPROVED MICROWAVE SILICON MESFET [J].

BAECHTOLD, W ;

WOLF, P .

SOLID-STATE ELECTRONICS, 1971, 14 (09) :783-+

[3] HIGH-SPEED GALLIUM-ARSENIDE SCHOTTKY-BARRIER FIELD-EFFECT TRANSISTORS [J].

DRANGEID, KE ;

SOMMERHALDER, R ;

WALTER, W .

ELECTRONICS LETTERS, 1970, 6 (08) :228-+

[4] MICROWAVE SILICON SCHOTTKY-BARRIER FIELD-EFFECT TRANSISTOR [J].

DRANGEID, KE ;

JAGGI, R ;

MIDDLEHO.S ;

MOHR, T ;

MOSER, A ;

SASSO, G ;

SOMMERHALDER, R ;

WOLF, P .

ELECTRONICS LETTERS, 1968, 4 (17) :362-+

[5]

LIECHTI CA, 1972, ISSCC DIG TECH PAPER, P158

[6] METALLIZATION PROCESSES IN FABRICATION OF SCHOTTKY-BARRIER FETS [J].

MIDDELHOEK, S .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (02) :148-+

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