IMPROVED MICROWAVE SILICON MESFET

被引:11
作者
BAECHTOLD, W
WOLF, P
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D O I
10.1016/S0038-1101(71)80003-5
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:783 / +
页数:1
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共 19 条
[2]   MOS FIELD EFFECT TRANSISTORS FORMED BY GATE MASKED ION IMPLANTATION [J].
BOWER, RW ;
DILL, HG ;
AUBUCHON, KG ;
THOMPSON, SA .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1968, ED15 (10) :757-&
[3]  
CLOUSER PL, 1970, IEEE INT SOLID STATE, P52
[4]   DYNAMIC PERFORMANCE OF SCHOTTKY-BARRIER FIELD-EFFECT TRANSISTORS [J].
DRANGEID, KE ;
SOMMERHA.R .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (02) :82-&
[5]  
DRANGEID KE, 1968, OCT IEEE INT EL DEV, P140
[6]   ELECTRON RESISTS FOR MICROCIRCUIT AND MASK PRODUCTION [J].
HATZAKIS, M .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (07) :1033-&
[7]  
LANGE J, 1967, MICROWAVES, V6, P38
[8]  
Mason S.J., 1954, IRE T CIRCUIT THEORY, VCT-1, P20, DOI DOI 10.1109/TCT.1954.1083579
[9]   PROJECTION MASKING, THIN PHOTORESIST LAYERS AND INTERFERENCE EFFECTS [J].
MIDDELHOEK, S .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (02) :117-+
[10]   METALLIZATION PROCESSES IN FABRICATION OF SCHOTTKY-BARRIER FETS [J].
MIDDELHOEK, S .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (02) :148-+