ELECTRON RESISTS FOR MICROCIRCUIT AND MASK PRODUCTION

被引：206

作者：

HATZAKIS, M

机构：

[1] International Business Machines Corporation, Thomas J. Watson Research Center, New York, Yorktown Heights

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1969年 / 116卷 / 07期

关键词：

D O I：

10.1149/1.2412145

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The properties of poly-(methyl methacrylate), a new electron resist developed at IBM Research, are presented in comparison to commercial photoresists under electron beam exposure. It is shown that methacrylate resist, with suitable processing, presents a means for submicron device fabrication with reasonable speed. Transistors with one- and half-micron emitter stripe widths have been fabricated using this resist as a medium for diffusion masking with SiO2. Also, a method for producing high-resolution, defect-free masks through methacrylate resist is presented. © 1969, The Electrochemical Society, Inc. All rights reserved.

引用

页码：1033 / &

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