STRUCTURE-DETERMINED GAIN-BAND PRODUCT OF JUNCTION TRIODE TRANSISTORS

[1] THE FIELD EFFECT TRANSISTOR [J]. BELL SYSTEM TECHNICAL JOURNAL, 1955, 34 (06): : 1149 - 1189

[2] KROMER H, 1953, NATURWISSENSCHAFTEN, V40, P578

[3] KROMER H, 1954, AEU-ARCH ELEKTRON UB, V8, P499

[4] KROMER H, 1954, AEU-ARCH ELEKTRON UB, V8, P363

[5] KROMER H, 1954, AEU-ARCH ELEKTRON UB, V8, P223

[6] KROMER H, 1956, TRANSISTORS, V1, P202

[7] A HIGH-FREQUENCY DIFFUSED BASE GERMANIUM TRANSISTOR [J]. BELL SYSTEM TECHNICAL JOURNAL, 1956, 35 (01): : 23 - 34

[8] AVALANCHE BREAKDOWN IN GERMANIUM [J]. PHYSICAL REVIEW, 1955, 99 (04): : 1234 - 1241

[9] THE DEPENDENCE OF TRANSISTOR PARAMETERS ON THE DISTRIBUTION OF BASE LAYER RESISTIVITY [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1956, 44 (01): : 72 - 78

[10] DRIFT MOBILITIES IN SEMICONDUCTORS .1. GERMANIUM [J]. PHYSICAL REVIEW, 1953, 92 (03): : 681 - 687

[1] THE FIELD EFFECT TRANSISTOR [J]. BELL SYSTEM TECHNICAL JOURNAL, 1955, 34 (06): : 1149 - 1189

[2] KROMER H, 1953, NATURWISSENSCHAFTEN, V40, P578

[3] KROMER H, 1954, AEU-ARCH ELEKTRON UB, V8, P499

[4] KROMER H, 1954, AEU-ARCH ELEKTRON UB, V8, P363

[5] KROMER H, 1954, AEU-ARCH ELEKTRON UB, V8, P223

[6] KROMER H, 1956, TRANSISTORS, V1, P202

[7] A HIGH-FREQUENCY DIFFUSED BASE GERMANIUM TRANSISTOR [J]. BELL SYSTEM TECHNICAL JOURNAL, 1956, 35 (01): : 23 - 34

[8] AVALANCHE BREAKDOWN IN GERMANIUM [J]. PHYSICAL REVIEW, 1955, 99 (04): : 1234 - 1241

[9] THE DEPENDENCE OF TRANSISTOR PARAMETERS ON THE DISTRIBUTION OF BASE LAYER RESISTIVITY [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1956, 44 (01): : 72 - 78

[10] DRIFT MOBILITIES IN SEMICONDUCTORS .1. GERMANIUM [J]. PHYSICAL REVIEW, 1953, 92 (03): : 681 - 687