AVALANCHE BREAKDOWN IN GERMANIUM

[1] EXPERIMENTAL EVIDENCE ON THE BAND STRUCTURE OF GERMANIUM AND SILICON [J]. PHYSICA, 1954, 20 (10): : 829 - 833

[2] MCAFEE, 1951, PHYS REV, V83, P650

[3] AVALANCHE BREAKDOWN IN SILICON [J]. PHYSICAL REVIEW, 1954, 94 (04): : 877 - 884

[4] ELECTRON MULTIPLICATION IN SILICON AND GERMANIUM [J]. PHYSICAL REVIEW, 1953, 91 (05): : 1079 - 1084

[5] IMPURITY DIFFUSION AND SPACE CHARGE LAYERS IN FUSED-IMPURITY P-N JUNCTIONS [J]. PHYSICAL REVIEW, 1953, 90 (04): : 630 - 632

[6] THE THEORY OF P-N JUNCTIONS IN SEMICONDUCTORS AND P-N JUNCTION TRANSISTORS [J]. BELL SYSTEM TECHNICAL JOURNAL, 1949, 28 (03): : 435 - 489

[7] THEORY OF ELECTRON MULTIPLICATION IN SILICON AND GERMANIUM [J]. PHYSICAL REVIEW, 1954, 95 (06): : 1415 - 1420

[8] WOLFF PA, COMMUNICATION

[9] Zener C., 1934, P ROY SOC A, V145, P523, DOI DOI 10.1098/RSPA.1934.0116

[1] EXPERIMENTAL EVIDENCE ON THE BAND STRUCTURE OF GERMANIUM AND SILICON [J]. PHYSICA, 1954, 20 (10): : 829 - 833

[2] MCAFEE, 1951, PHYS REV, V83, P650

[3] AVALANCHE BREAKDOWN IN SILICON [J]. PHYSICAL REVIEW, 1954, 94 (04): : 877 - 884

[4] ELECTRON MULTIPLICATION IN SILICON AND GERMANIUM [J]. PHYSICAL REVIEW, 1953, 91 (05): : 1079 - 1084

[5] IMPURITY DIFFUSION AND SPACE CHARGE LAYERS IN FUSED-IMPURITY P-N JUNCTIONS [J]. PHYSICAL REVIEW, 1953, 90 (04): : 630 - 632

[6] THE THEORY OF P-N JUNCTIONS IN SEMICONDUCTORS AND P-N JUNCTION TRANSISTORS [J]. BELL SYSTEM TECHNICAL JOURNAL, 1949, 28 (03): : 435 - 489

[7] THEORY OF ELECTRON MULTIPLICATION IN SILICON AND GERMANIUM [J]. PHYSICAL REVIEW, 1954, 95 (06): : 1415 - 1420

[8] WOLFF PA, COMMUNICATION

[9] Zener C., 1934, P ROY SOC A, V145, P523, DOI DOI 10.1098/RSPA.1934.0116