NOISE BEHAVIOR OF SCHOTTKY BARRIER GATE FIELD-EFFECT TRANSISTORS AT MICROWAVE FREQUENCIES

被引：35

作者：

BAECHTOLD, W

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1971年 / ED18卷 / 02期

关键词：

D O I：

10.1109/T-ED.1971.17156

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：97 / +

页数：1

共 17 条

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[6]

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[8] PHYSICAL PHENOMENON RESPONSIBLE FOR SATURATION CURRENT IN FIELD EFFECT DEVICES [J].

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[9]

JAGGI R, 1969, HELV PHYS ACTA, V42, P631

[10] HIGH-FREQUENCY NOISE OF JUNCTION FIELD-EFFECT TRANSISTOR [J].

KLAASSEN, FM .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (07) :368-+

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