MICROWAVE SILICON SCHOTTKY-BARRIER FIELD-EFFECT TRANSISTOR

[1] AN EPITAXIAL GAAS FIELD-EFFECT TRANSISTOR [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (07): : 1237 - &

[2] SCHOTTKY BARRIER GATE FIELD EFFECT TRANSISTOR [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (02): : 307 - &

[3] MUENCH W, 1967, VERHANDLG DT PHYSIKA, V2, P59

[4] SCHUETZE HJ, 1966, SEMICOND PROD SOLID, V9, P31

[5] A UNIPOLAR FIELD-EFFECT TRANSISTOR [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11): : 1365 - 1376

[1] AN EPITAXIAL GAAS FIELD-EFFECT TRANSISTOR [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (07): : 1237 - &

[2] SCHOTTKY BARRIER GATE FIELD EFFECT TRANSISTOR [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (02): : 307 - &

[3] MUENCH W, 1967, VERHANDLG DT PHYSIKA, V2, P59

[4] SCHUETZE HJ, 1966, SEMICOND PROD SOLID, V9, P31

[5] A UNIPOLAR FIELD-EFFECT TRANSISTOR [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11): : 1365 - 1376