THERMAL REMOVAL OF SURFACE CARBON FROM GAAS SUBSTRATE USED IN MOLECULAR-BEAM EPITAXY

[1] AUGER ANALYSIS OF SILICON THIN-FILMS DEPOSITED ON CARBON AT HIGH-TEMPERATURES [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (08) : 3402 - 3407

[2] EFFECT OF SUBSTRATE SURFACE-TREATMENT IN MOLECULAR-BEAM EPITAXY ON THE VERTICAL ELECTRONIC TRANSPORT THROUGH THE FILM-SUBSTRATE INTERFACE [J]. APPLIED PHYSICS LETTERS, 1981, 39 (03) : 229 - 231

[3] STUDIES BY CROSS-SECTIONAL TRANSMISSION ELECTRON-MICROSCOPE OF INAS GROWN BY MOLECULAR-BEAM EPITAXY ON GAAS SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1980, 37 (06) : 538 - 540

[4] Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9

[1] AUGER ANALYSIS OF SILICON THIN-FILMS DEPOSITED ON CARBON AT HIGH-TEMPERATURES [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (08) : 3402 - 3407

[2] EFFECT OF SUBSTRATE SURFACE-TREATMENT IN MOLECULAR-BEAM EPITAXY ON THE VERTICAL ELECTRONIC TRANSPORT THROUGH THE FILM-SUBSTRATE INTERFACE [J]. APPLIED PHYSICS LETTERS, 1981, 39 (03) : 229 - 231

[3] STUDIES BY CROSS-SECTIONAL TRANSMISSION ELECTRON-MICROSCOPE OF INAS GROWN BY MOLECULAR-BEAM EPITAXY ON GAAS SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1980, 37 (06) : 538 - 540

[4] Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9