STUDIES BY CROSS-SECTIONAL TRANSMISSION ELECTRON-MICROSCOPE OF INAS GROWN BY MOLECULAR-BEAM EPITAXY ON GAAS SUBSTRATES

被引：33

作者：

CHANG, CA

SERRANO, CM

CHANG, LL

ESAKI, L

机构：

来源：

APPLIED PHYSICS LETTERS | 1980年 / 37卷 / 06期

关键词：

D O I：

10.1063/1.91977

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：538 / 540

页数：3

共 8 条

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JOURNAL OF MATERIALS SCIENCE, 1969, 4 (03) :223-&

[2] EFFECT OF LATTICE MISMATCH ON THE ELECTRON MOBILITIES OF INAS GROWN ON GAAS BY MBE [J].

CHANG, CA ;

SERRANO, CM ;

CHANG, LL ;

ESAKI, L .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (02) :603-605

[3] MOLECULAR-BEAM EPITAXY (MBE) OF IN1-XGAXAS AND GASB1-YASY [J].

CHANG, CA ;

LUDEKE, R ;

CHANG, LL ;

ESAKI, L .

APPLIED PHYSICS LETTERS, 1977, 31 (11) :759-761

[4] SUBSTRATE EFFECT ON THE LATTICE-CONSTANTS OF THE MBE-GROWN IN1-XGAXAS AND GASB1-YASY [J].

CHANG, CA ;

SEGMULLER, A .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02) :285-287

[5]

MATTHEWS JW, 1975, EPITAXIAL GROWTH B, P559

[6]

OLSEN GH, 1978, CRYSTAL GROWTH THEOR, V2, P1

[7] IN1-XGAXAS-GASB1-YASY HETEROJUNCTIONS BY MOLECULAR-BEAM EPITAXY [J].

SAKAKI, H ;

CHANG, LL ;

LUDEKE, R ;

CHANG, CA ;

SAIHALASZ, GA ;

ESAKI, L .

APPLIED PHYSICS LETTERS, 1977, 31 (03) :211-213

[8] ELECTRONIC STRUCTURES OF SEMICONDUCTOR ALLOYS [J].

VANVECHTEN, JA ;

BERGSTRESSER, TK .

PHYSICAL REVIEW B-SOLID STATE, 1970, 1 (08) :3351-+

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