IN1-XGAXAS-GASB1-YASY HETEROJUNCTIONS BY MOLECULAR-BEAM EPITAXY

被引：192

作者：

SAKAKI, H ^{[1
]}

CHANG, LL ^{[1
]}

LUDEKE, R ^{[1
]}

CHANG, CA ^{[1
]}

SAIHALASZ, GA ^{[1
]}

ESAKI, L ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

APPLIED PHYSICS LETTERS | 1977年 / 31卷 / 03期

关键词：

D O I：

10.1063/1.89609

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：211 / 213

页数：3

共 12 条

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BHAT, R ;

GHANDHI, SK .

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[2]

BERGMANN YV, 1976, SOV PHYS SEMICOND+, V10, P930

[3] STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY [J].

CHANG, LL ;

ESAKI, L ;

HOWARD, WE ;

LUDEKE, R ;

SCHUL, G .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1973, 10 (05) :655-662

[4] INTERDIFFUSION BETWEEN GAAS AND ALAS [J].

CHANG, LL ;

KOMA, A .

APPLIED PHYSICS LETTERS, 1976, 29 (03) :138-141

[5] SEMICONDUCTOR SUPERFINE STRUCTURES BY COMPUTER-CONTROLLED MOLECULAR-BEAM EPITAXY [J].

ESAKI, L ;

CHANG, LL .

THIN SOLID FILMS, 1976, 36 (02) :285-298

[6]

GOBELI GW, 1965, PHYS REV A, V137, P245

[7] THERMAL AND ELECTRICAL TRANSPORT IN INAS-GAAS ALLOYS [J].

HOCKINGS, EF ;

KUDMAN, I ;

SEIDEL, TE ;

SCHMELZ, CM ;

STEIGMEIER, EF .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (07) :2879-+

[8]

NEUBERGER M, 1971, HDB ELECTRONIC MATER, V2

[9]

REDIKER RH, 1965, T METALL SOC AIME, V233, P463

[10] NEW SEMICONDUCTOR SUPERLATTICE [J].

SAIHALASZ, GA ;

TSU, R ;

ESAKI, L .

APPLIED PHYSICS LETTERS, 1977, 30 (12) :651-653

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