NEW SEMICONDUCTOR SUPERLATTICE

被引：518

作者：

SAIHALASZ, GA ^{[1
]}

TSU, R ^{[1
]}

ESAKI, L ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

APPLIED PHYSICS LETTERS | 1977年 / 30卷 / 12期

关键词：

D O I：

10.1063/1.89273

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：651 / 653

页数：3

共 21 条

[1] LIQUID EPITAXIAL GROWTH OF GAASSB AND ITS USE AS A HIGH-EFFICIENCY, LONG-WAVELENGTH THRESHOLD PHOTOEMITTER
ANTYPAS, GA
JAMES, LW
[J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (05) : 2165 - &
[2] MEASUREMENT OF ENERGY-BAND GAP USING AN ELECTROLYTE-SEMICONDUCTOR JUNCTION - WATER-GALLIUM INDIUM ARSENIDE ALLOYS
BALIGA, BJ
BHAT, R
GHANDHI, SK
[J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (09) : 3941 - 3945
[3] RESONANT TUNNELING IN SEMICONDUCTOR DOUBLE BARRIERS
CHANG, LL
ESAKI, L
TSU, R
[J]. APPLIED PHYSICS LETTERS, 1974, 24 (12) : 593 - 595
[4] STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY
CHANG, LL
ESAKI, L
HOWARD, WE
LUDEKE, R
SCHUL, G
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1973, 10 (05): : 655 - 662
[5] CHANG LN, UNPUBLISHED
[6] QUANTUM STATES OF CONFINED CARRIERS IN VERY THIN ALXGA1-XAS-GAAS-ALXGA1-XAS HETEROSTRUCTURES
DINGLE, R
WIEGMANN, W
HENRY, CH
[J]. PHYSICAL REVIEW LETTERS, 1974, 33 (14) : 827 - 830
[7] DIRECT OBSERVATION OF SUPERLATTICE FORMATION IN A SEMICONDUCTOR HETEROSTRUCTURE
DINGLE, R
GOSSARD, AC
WIEGMANN, W
[J]. PHYSICAL REVIEW LETTERS, 1975, 34 (21) : 1327 - 1330
[8] NEW TRANSPORT PHENOMENON IN A SEMICONDUCTOR SUPERLATTICE
ESAKI, L
CHANG, LL
[J]. PHYSICAL REVIEW LETTERS, 1974, 33 (08) : 495 - 498
[9] NEW TYPE OF NEGATIVE RESISTANCE IN BARRIER TUNNELING
ESAKI, L
STILES, PJ
[J]. PHYSICAL REVIEW LETTERS, 1966, 16 (24) : 1108 - &
[10] SUPERLATTICE AND NEGATIVE DIFFERENTIAL CONDUCTIVITY IN SEMICONDUCTORS
ESAKI, L
TSU, R
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (01) : 61 - &

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