MEASUREMENT OF ENERGY-BAND GAP USING AN ELECTROLYTE-SEMICONDUCTOR JUNCTION - WATER-GALLIUM INDIUM ARSENIDE ALLOYS

被引:14
作者
BALIGA, BJ [1 ]
BHAT, R [1 ]
GHANDHI, SK [1 ]
机构
[1] RENSSELAER POLYTECH INST,ELECT & SYST ENGN DEPT,TROY,NY 12181
关键词
D O I
10.1063/1.322142
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
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页码:3941 / 3945
页数:5
相关论文
共 16 条
[1]   THERMAL, ELECTRICAL AND OPTICAL PROPERTIES OF (IN,GA)AS ALLOYS [J].
ABRAHAMS, MS ;
BRAUNSTEIN, R ;
ROSI, FD .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 10 (2-3) :204-210
[2]  
BALIGA BJ, 1975, J ELECTROCHEM SOC, V122, pR30
[3]   ELECTROREFLECTANCE AT A SEMICONDUCTOR-ELECTROLYTE INTERFACE [J].
CARDONA, M ;
SHAKLEE, KL ;
POLLAK, FH .
PHYSICAL REVIEW, 1967, 154 (03) :696-+
[4]  
DZHAKHUTASHVLI TV, 1971, SOV PHYS SEMICOND+, V5, P190
[5]   OPTICAL-PROPERTIES OF VAPOR-GROWN INXGA1-X AS EPITAXIAL-FILMS ON GAAS AND INXGA1-XP SUBSTRATES [J].
ENSTROM, RE ;
ZANZUCCHI, PJ ;
APPERT, JR .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (01) :300-306
[6]   SIMPLE INTERNAL PHOTOEMISSION METHOD FOR DETERMINING SHAPE OF YIELD CURVES OF NEGATIVE ELECTRON AFFINITY SEMICONDUCTORS [J].
ESCHER, JS ;
WILLIAMS, BF .
JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) :525-526
[7]   DEPLETION-LAYER PHOTOEFFECTS IN SEMICONDUCTORS [J].
GARTNER, WW .
PHYSICAL REVIEW, 1959, 116 (01) :84-87
[8]  
Johnson E. J., 1967, SEMICONDUCT SEMIMET, V3
[9]   INFRARED ABSORPTION IN GALLIUM ARSENIDE [J].
MOSS, TS ;
HAWKINS, TDF .
INFRARED PHYSICS, 1961, 1 (02) :111-115
[10]  
Myamlin V.A., 1967, ELECTROCHEMISTRY SEM