MOLECULAR-BEAM EPITAXY (MBE) OF IN1-XGAXAS AND GASB1-YASY

被引：208

作者：

CHANG, CA ^{[1
]}

LUDEKE, R ^{[1
]}

CHANG, LL ^{[1
]}

ESAKI, L ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

关键词：

D O I：

10.1063/1.89538

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：759 / 761

页数：3

共 15 条

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[2] STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1973, 10 (05): : 655 - 662
[3] CHANG LL, 1975, EPITAXIAL GROWTH A, P37
[4] Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9
[5] ENSTROM RE, 1971, 1970 GALL ARS REL CO, P30
[6] SEMICONDUCTOR SUPERFINE STRUCTURES BY COMPUTER-CONTROLLED MOLECULAR-BEAM EPITAXY
ESAKI, L
CHANG, LL
[J]. THIN SOLID FILMS, 1976, 36 (02) : 285 - 298
[7] Gratton M. F., 1973, Journal of Electronic Materials, V2, P455, DOI 10.1007/BF02660149
[8] THERMAL AND ELECTRICAL TRANSPORT IN INAS-GAAS ALLOYS
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[J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (07) : 2879 - +
[9] Hultgren RR, 1973, SELECTED VALUES THER
[10] MISCIBILITY OF 3-V SEMICONDUCTORS STUDIED BY FLASH EVAPORATION
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[J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (04) : 1233 - &