EFFECT OF LATTICE MISMATCH ON THE ELECTRON MOBILITIES OF INAS GROWN ON GAAS BY MBE

被引：26

作者：

CHANG, CA

SERRANO, CM

CHANG, LL

ESAKI, L

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1980年 / 17卷 / 02期

关键词：

D O I：

10.1116/1.570522

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A study was made of the effect of lattice mismatch on the electron mobilities of InAs films grown on GaAs by MBE. The electron mobilities decrease rapidly with decreasing film thickness in the range of 0. 2-2 mu m. This is attributed to the high density of dislocations observed in the thinner films. Using a step-grading growth technique, the dislocation density is reduced with a simultaneous improvement in mobilities.

引用

页码：603 / 605

页数：3

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