ELECTRON TUNNELING AND CAPACITANCE STUDIES OF A QUANTIZED SURFACE ACCUMULATION LAYER

被引：63

作者：

TSUI, DC ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

PHYSICAL REVIEW B | 1973年 / 8卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.8.2657

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：2657 / 2669

页数：13

共 28 条

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[10] PHOTOELECTRIC EMISSION FROM INAS - SURFACE PROPERTIES AND INTERBAND TRANSITIONS [J].

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