SELF-INDUCED DEFICIENCY STATE IN DEGENERATE SEMICONDUCTORS

被引:12
作者
APPELBAUM, JA
BARAFF, GA
机构
关键词
D O I
10.1103/PhysRevLett.26.1432
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:1432 / +
页数:1
相关论文
共 9 条
  • [1] BARAFF GA, TO BE PUBLISHED
  • [2] DUKE CB, 1967, PHYS REV, V164, P1214, DOI 10.1103/PhysRev.164.1214
  • [3] OPTICAL ABSORPTION DUE TO SPACE-CHARGE-INDUCED LOCALIZED STATES
    DUKE, CB
    [J]. PHYSICAL REVIEW, 1967, 159 (03): : 632 - +
  • [4] FRIEDEL J, 1952, PHILOS MAG, V43, P153
  • [5] Friedel J., 1958, NUOVO CIM, V7, P287, DOI DOI 10.1007/BF02751483
  • [6] KITTEL C, 1963, QUANTUM THEORY SOLID, P340
  • [7] SCHRIEFFER JR, 1957, SEMICONDUCTOR SURFAC
  • [8] PROPERTIES OF SEMICONDUCTOR SURFACE INVERSION LAYERS IN ELECTRIC QUANTUM LIMIT
    STERN, F
    HOWARD, WE
    [J]. PHYSICAL REVIEW, 1967, 163 (03): : 816 - &
  • [9] THE NUCLEAR SURFACE ENERGY
    SWIATECKI, WJ
    [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION A, 1951, 64 (375): : 226 - 238