PROPERTIES OF SEMICONDUCTOR SURFACE INVERSION LAYERS IN ELECTRIC QUANTUM LIMIT

[1] EFFECT OF SURFACE STATES ON ELECTRON MOBILITY IN SILICON SURFACE-INVERSION LAYERS [J]. APPLIED PHYSICS LETTERS, 1966, 9 (09) : 344 - &

[2] ON THE NUMBER OF BOUND STATES IN A CENTRAL FIELD OF FORCE [J]. PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, 1952, 38 (11) : 961 - 966

[3] MANY-VALLEY DIPOLE SCATTERING OF ELECTRONS IN GERMANIUM AND SILICON [J]. PHYSICAL REVIEW, 1966, 147 (02): : 532 - &

[4] BONDAR VM, 1967, FIZ TVERD TELA+, V8, P2012

[5] BONDAR VM, 1966, FIZ TVERD TELA, V8, P2511

[6] Cooley JW., 1961, MATH COMPUT, V15, P363, DOI [10.2307/2003025, DOI 10.2307/2003025]

[7] DEMIKHOVSKII VY, 1964, SOV PHYS-SOL STATE, V6, P743

[8] DEMIKHOVSKII VY, 1964, FIZ TVERD TELA, V6, P960

[9] DUKE CB, 1967, PHYS LETTERS, VA 24, P461

[10] NEGATIVE FIELD-EFFECT MOBILITY ON (100) SI SURFACES [J]. PHYSICAL REVIEW LETTERS, 1966, 16 (18) : 797 - &

[1] EFFECT OF SURFACE STATES ON ELECTRON MOBILITY IN SILICON SURFACE-INVERSION LAYERS [J]. APPLIED PHYSICS LETTERS, 1966, 9 (09) : 344 - &

[2] ON THE NUMBER OF BOUND STATES IN A CENTRAL FIELD OF FORCE [J]. PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, 1952, 38 (11) : 961 - 966

[3] MANY-VALLEY DIPOLE SCATTERING OF ELECTRONS IN GERMANIUM AND SILICON [J]. PHYSICAL REVIEW, 1966, 147 (02): : 532 - &

[4] BONDAR VM, 1967, FIZ TVERD TELA+, V8, P2012

[5] BONDAR VM, 1966, FIZ TVERD TELA, V8, P2511

[6] Cooley JW., 1961, MATH COMPUT, V15, P363, DOI [10.2307/2003025, DOI 10.2307/2003025]

[7] DEMIKHOVSKII VY, 1964, SOV PHYS-SOL STATE, V6, P743

[8] DEMIKHOVSKII VY, 1964, FIZ TVERD TELA, V6, P960

[9] DUKE CB, 1967, PHYS LETTERS, VA 24, P461

[10] NEGATIVE FIELD-EFFECT MOBILITY ON (100) SI SURFACES [J]. PHYSICAL REVIEW LETTERS, 1966, 16 (18) : 797 - &