EFFECT OF SURFACE STATES ON ELECTRON MOBILITY IN SILICON SURFACE-INVERSION LAYERS

被引：50

作者：

ARNOLD, E

ABOWITZ, G

机构：

来源：

APPLIED PHYSICS LETTERS | 1966年 / 9卷 / 09期

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D O I：

10.1063/1.1754779

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：344 / &

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