NEW METHOD OF MEASURING INTERFACE STATE DENSITIES IN MIS DEVICES

被引：12

作者：

AMELIO, GF

机构：

来源：

SURFACE SCIENCE | 1972年 / 29卷 / 01期

关键词：

D O I：

10.1016/0039-6028(72)90074-X

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：125 / +

页数：1

共 11 条

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[3]

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[4]

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GULDBRANDSEN, T .

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[9] SI-SIO2 INTERFACE - ELECTRICAL PROPERTIES AS DETERMINED BY METAL-INSULATOR-SILICON CONDUCTANCE TECHNIQUE [J].

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[10] AUTOMATIC PLOTTING OF CONDUCTANCE AND CAPACITANCE OF METAL-INSULATOR-SEMICONDUCTOR DIODES OR ANY 2 TERMINAL COMPLEX ADMITTANCE [J].

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