SI-SIO2 INTERFACE - ELECTRICAL PROPERTIES AS DETERMINED BY METAL-INSULATOR-SILICON CONDUCTANCE TECHNIQUE

被引：1831

作者：

NICOLLIA.EH

GOETZBER.A

机构：

来源：

BELL SYSTEM TECHNICAL JOURNAL | 1967年 / 46卷 / 06期

关键词：

D O I：

10.1002/j.1538-7305.1967.tb01727.x

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1055 / +

页数：1

共 34 条

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