AVALANCHE EFFECTS IN SILICON P-N JUNCTIONS .2. STRUCTURALLY PERFECT JUNCTIONS

被引：153

作者：

GOETZBERGER, A

SCARLETT, RM

HAITZ, RH

MCDONALD, B

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1963年 / 34卷 / 06期

关键词：

D O I：

10.1063/1.1702640

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1591 / +

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