INTRINSIC OPTICAL ABSORPTION IN GERMANIUM-SILICON ALLOYS

[1] DEFINITION OF ENERGY BANDS IN THE PRESENCE OF AN EXTERNAL FORCE FIELD [J]. PHYSICAL REVIEW, 1957, 107 (03): : 698 - 701

[2] VASILEFF CALCULATION OF ELECTRONIC SELF-ENERGY IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1957, 107 (03): : 671 - 671

[3] [Anonymous], COMMUNICATION

[4] ANTONCIK E, 1955, CZECH J PHYS, V5, P4

[5] BARDEEN, 1956, 1954 P C PHOT ATL CI, P146

[6] BURSTEIN, 1956, 1954 P C PHOT ATL CI, P353

[7] CHRISTIAN SD, UNPUBLISHED

[8] INTRINSIC OPTICAL ABSORPTION IN SINGLE-CRYSTAL GERMANIUM AND SILICON AT 77-DEGREES-K AND 300-DEGREES-K [J]. PHYSICAL REVIEW, 1955, 99 (04): : 1151 - 1155

[9] DEXTER DL, 1956, 1954 P C PHOT ATL CI, P155

[10] DRESSELHAUS G, 1956, J PHYS CHEM SOLIDS, V1, P15

[1] DEFINITION OF ENERGY BANDS IN THE PRESENCE OF AN EXTERNAL FORCE FIELD [J]. PHYSICAL REVIEW, 1957, 107 (03): : 698 - 701

[2] VASILEFF CALCULATION OF ELECTRONIC SELF-ENERGY IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1957, 107 (03): : 671 - 671

[3] [Anonymous], COMMUNICATION

[4] ANTONCIK E, 1955, CZECH J PHYS, V5, P4

[5] BARDEEN, 1956, 1954 P C PHOT ATL CI, P146

[6] BURSTEIN, 1956, 1954 P C PHOT ATL CI, P353

[7] CHRISTIAN SD, UNPUBLISHED

[8] INTRINSIC OPTICAL ABSORPTION IN SINGLE-CRYSTAL GERMANIUM AND SILICON AT 77-DEGREES-K AND 300-DEGREES-K [J]. PHYSICAL REVIEW, 1955, 99 (04): : 1151 - 1155

[9] DEXTER DL, 1956, 1954 P C PHOT ATL CI, P155

[10] DRESSELHAUS G, 1956, J PHYS CHEM SOLIDS, V1, P15