INTERPRETATION OF TUNNEL EMISSION AND CAPACITANCE MEASUREMENTS IN PRESENCE OF DIELECTRIC FILM-THICKNESS FLUCTUATIONS - (T/E)

被引：14

作者：

CROWELL, CR

机构：

来源：

APPLIED PHYSICS LETTERS | 1966年 / 8卷 / 12期

关键词：

D O I：

10.1063/1.1754462

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：328 / &

相关论文

共 12 条

[1] EFFECT OF INSULATING-FILM-THICKNESS NONUNIFORMITY ON TUNNEL CHARACTERISTICS [J].

CHOW, CK .

JOURNAL OF APPLIED PHYSICS, 1963, 34 (09) :2599-&

[2] SURFACE-STATE AND INTERFACE EFFECTS IN SCHOTTKY BARRIERS AT N-TYPE SILICON SURFACES [J].

CROWELL, CR ;

SHORE, HB ;

LABATE, EE .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) :3843-&

[3] TUNNELING THROUGH ASYMMETRIC BARRIERS [J].

HARTMAN, TE .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (11) :3283-&

[4]

HURYCH Z, TO BE PUBLISHED

[5]

MCCOLL M, 1965, B AM PHYS SOC, V10, P711

[6]

MCCOLL M, PRIVATE COMMUNICATIO

[7]

MOTT NF, 1958, THEORY PROPERTIES ME, P86

[8] MOS CONDUCTANCE TECHNIQUE FOR MEASURING SURFACE STATE PARAMETERS (SIO2-SI E) [J].

NICOLLIAN, EH ;

GOETZBERGER, A .

APPLIED PHYSICS LETTERS, 1965, 7 (08) :216-+

[9] ELECTRON TUNNELING THROUGH ASYMMETRIC FILMS OF THERMALLY GROWN AL2O3 [J].

POLLACK, SR ;

MORRIS, CE .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (05) :1503-&

[10] GENERALIZED FORMULA FOR ELECTRIC TUNNEL EFFECT BETWEEN SIMILAR ELECTRODES SEPARATED BY A THIN INSULATING FILM [J].

SIMMONS, JG .

JOURNAL OF APPLIED PHYSICS, 1963, 34 (06) :1793-&