VARIATION WITH FREQUENCY OF TRANSVERSE IMPEDANCE OF SEMICONDUCTOR SURFACE LAYERS

被引:33
作者
BERZ, F
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10.1016/0022-3697(62)90219-6
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O6 [化学];
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0703 ;
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页码:1795 / &
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[1]  
BERZ F, 1959, J ELECTRON CONTR, V6, P197
[2]  
BOKE K, 1960, Z NATURFORSCH PT A, V15, P550
[4]   PHYSICAL THEORY OF SEMICONDUCTOR SURFACES [J].
GARRETT, CGB ;
BRATTAIN, WH .
PHYSICAL REVIEW, 1955, 99 (02) :376-387
[5]   HIGH-FREQUENCY RELAXATION PROCESSES IN THE FIELD-EFFECT EXPERIMENT [J].
GARRETT, CGB .
PHYSICAL REVIEW, 1957, 107 (02) :478-487
[6]  
HURD RM, 1960, J ELECTROCHEM SOC, V107, pC191
[7]   LARGE-SIGNAL SURFACE PHOTOVOLTAGE STUDIES WITH GERMANIUM [J].
JOHNSON, EO .
PHYSICAL REVIEW, 1958, 111 (01) :153-166
[8]   CALCULATION OF THE SPACE CHARGE, ELECTRIC FIELD, AND FREE CARRIER CONCENTRATION AT THE SURFACE OF A SEMICONDUCTOR [J].
KINGSTON, RH ;
NEUSTADTER, SF .
JOURNAL OF APPLIED PHYSICS, 1955, 26 (06) :718-720
[9]   SEMICONDUCTOR SURFACE VARACTOR [J].
LINDNER, R .
BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (03) :803-+
[10]  
PFANN WG, 1959, P IRE, V47, P2011