THIN-FILM SILICON-ON-SAPPHIRE DEEP DEPLETION MOS TRANSISTORS

被引：47

作者：

HEIMAN, FP

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1966年 / ED13卷 / 12期

关键词：

D O I：

10.1109/T-ED.1966.15859

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：855 / +

页数：1

共 26 条

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[8] EFFECTS OF OXIDE TRAPS ON MOS CAPACITANCE [J].

HEIMAN, FP ;

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IEEE TRANSACTIONS ON ELECTRON DEVICES, 1965, ED12 (04) :167-&

[9] DETERMINATION OF CONDUCTIVITY TYPE FROM MOS-CAPACITANCE MEASUREMENTS [J].

HEIMAN, FP ;

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WARFIELD, G .

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[10] AN ANALYSIS OF DEEP DEPLETION THIN-FILM MOS TRANSISTORS [J].

HOFSTEIN, SR .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (12) :846-&

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