INVESTIGATION OF THERMALLY OXIDISED SILICON SURFACES USING METAL-OXIDE-SEMICONDUCTOR STRUCTURES

被引：458

作者：

GROVE, AS

DEAL, BE

SNOW, EH

SAH, CT

机构：

来源：

SOLID-STATE ELECTRONICS | 1965年 / 8卷 / 02期

关键词：

D O I：

10.1016/0038-1101(65)90046-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：145 / +

页数：1

共 32 条

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[9]

DEAL BE, TO BE PUBLISHED

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