WORK FUNCTION, PHOTOELECTRIC THRESHOLD, AND SURFACE STATES OF ATOMICALLY CLEAN SILICON

被引：400

作者：

ALLEN, FG

GOBELI, GW

机构：

来源：

PHYSICAL REVIEW | 1962年 / 127卷 / 01期

关键词：

D O I：

10.1103/PhysRev.127.150

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

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页码：150 / &

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[1] P-LAYERS ON VACUUM HEATED SILICON
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[2] CLEANING OF SILICON SURFACES BY HEATING IN HIGH VACUUM
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[3] WORK FUNCTION AND EMISSION STUDIES ON CLEAN SILICON SURFACES
ALLEN, FG
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[4] VARIATION OF CONTACT POTENTIAL WITH CRYSTAL FACE FOR GERMANIUM
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[6] BRATTAIN WH, 1947, PHYS REV, V72, P345
[7] WORK FUNCTION AND SORPTION PROPERTIES OF SILICON CRYSTALS
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FARNSWORTH, HE
[J]. JOURNAL OF APPLIED PHYSICS, 1958, 29 (08) : 1195 - 1202
[8] CONTACT POTENTIAL MEASUREMENTS ON CLEANED GERMANIUM SURFACES
FOWLER, AB
[J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (04) : 556 - 558
[9] SURFACE MEASUREMENTS ON FRESHLY CLEAVED SILICON PARA-NORMAL JUNCTIONS
GOBELI, GW
ALLEN, FG
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 14 : 23 - &
[10] DIRECT AND INDIRECT EXCITATION PROCESSES IN PHOTOELECTRIC EMISSION FROM SILICON
GOBELI, GW
ALLEN, FG
[J]. PHYSICAL REVIEW, 1962, 127 (01): : 141 - &

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