WORK FUNCTION, PHOTOELECTRIC THRESHOLD, AND SURFACE STATES OF ATOMICALLY CLEAN SILICON

被引：400

作者：

ALLEN, FG

GOBELI, GW

机构：

来源：

PHYSICAL REVIEW | 1962年 / 127卷 / 01期

关键词：

D O I：

10.1103/PhysRev.127.150

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：150 / &

共 31 条

[21] CONTACT POTENTIAL DIFFERENCE IN SILICON CRYSTAL RECTIFIERS
MEYERHOF, WE
[J]. PHYSICAL REVIEW, 1947, 71 (10): : 727 - 735
[22] FIELD-INDUCED CONDUCTIVITY CHANGES IN GERMANIUM
MONTGOMERY, HC
BROWN, WL
[J]. PHYSICAL REVIEW, 1956, 103 (04): : 865 - 870
[23] SURFACE STATES ON CLEAVED SILICON
PALMER, DR
DAUENBAUGH, CE
MORRISON, SR
[J]. PHYSICAL REVIEW LETTERS, 1961, 6 (04) : 170 - &
[24] ELECTRICAL PROPERTIES OF CLEAVED GERMANIUM SURFACES
PALMER, DR
MORRISON, SR
DAUENBAUGH, CE
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 14 : 27 - 32
[25] On the surface states associated with a periodic potential
Shockley, W
[J]. PHYSICAL REVIEW, 1939, 56 (04): : 317 - 323
[26] Simon R.E., 1959, B AM PHYS SOC, V4, P410
[27] TEMPERATURE DEPENDENCE OF THE WORK FUNCTION OF SEMICONDUCTORS
SMITH, AH
[J]. PHYSICAL REVIEW, 1949, 75 (06): : 953 - 958
[28] Tamm I. Y., 1932, PHYS Z SOWJETUNION, V1, P733
[29] WANG CW, UNPUBLISHED
[30] WOLFF P, UNPUBLISHED