WORK FUNCTION AND EMISSION STUDIES ON CLEAN SILICON SURFACES

被引：74

作者：

ALLEN, FG

机构：

来源：

关键词：

D O I：

10.1016/0022-3697(59)90291-4

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：119 / &

共 12 条

ALLEN, FG .

[2] VARIATION OF CONTACT POTENTIAL WITH CRYSTAL FACE FOR GERMANIUM [J].

ALLEN, FG ;

FOWLER, AB .

[3]

ALLEN FG, 1955, THESIS HARVARD U

[4] PHOTOELECTRIC EMISSION AND CONTACT POTENTIALS OF SEMICONDUCTORS [J].

APKER, L ;

TAFT, E ;

DICKEY, J .

PHYSICAL REVIEW, 1948, 74 (10) :1462-1474

[5] FIELD EMISSION FROM SILICON [J].

DASARO, LA .

[6]

DILLON JA, 1958, B AM PHYS SOC, V3

[7]

EISINGER J, UNPUBLISHED

[8] ELECTRICAL RESISTIVITY AND THERMIONIC EMISSION OF SILICON [J].

ESAKI, L .

[9]

GOOD R, HDB PHYSIK, V21, P206

[10] ELECTRICAL PROPERTIES OF SILICON CONTAINING ARSENIC AND BORON [J].

MORIN, FJ ;

MAITA, JP .

PHYSICAL REVIEW, 1954, 96 (01) :28-35