ELECTRICAL PROPERTIES OF SILICON CONTAINING ARSENIC AND BORON

被引：892

作者：

MORIN, FJ

MAITA, JP

机构：

来源：

PHYSICAL REVIEW | 1954年 / 96卷 / 01期

关键词：

D O I：

10.1103/PhysRev.96.28

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：28 / 35

页数：8

共 10 条

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[9] GROWTH OF GERMANIUM SINGLE CRYSTALS CONTAINING P-N JUNCTIONS [J].

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[10]

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