DIRECT AND INDIRECT EXCITATION PROCESSES IN PHOTOELECTRIC EMISSION FROM SILICON

被引：202

作者：

GOBELI, GW

ALLEN, FG

机构：

来源：

PHYSICAL REVIEW | 1962年 / 127卷 / 01期

关键词：

D O I：

10.1103/PhysRev.127.141

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：141 / &

共 22 条

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ALLEN, FG
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APKER, L
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PHILLIPS, JC
[J]. PHYSICAL REVIEW, 1960, 118 (05): : 1153 - 1167
[8] KOHN W, 1957, SOLID STATE PHYSICS, P297
[9] ELECTRON MOBILITIES AND TUNNELING CURRENTS IN SILICON
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GILBERT, JF
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[10] METHFESSEL S, 1959, Z PHYSIK, V147, P442