THEORY OF PHOTOELECTRIC EMISSION FROM SEMICONDUCTORS

被引：382

作者：

KANE, EO

机构：

来源：

PHYSICAL REVIEW | 1962年 / 127卷 / 01期

关键词：

D O I：

10.1103/PhysRev.127.131

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：131 / &

共 8 条

[1] THEORY OF PHOTOELECTRIC EMISSION FROM METALS
FAN, HY
[J]. PHYSICAL REVIEW, 1945, 68 (1-2): : 43 - 52
[2] DIRECT AND INDIRECT EXCITATION PROCESSES IN PHOTOELECTRIC EMISSION FROM SILICON
GOBELI, GW
ALLEN, FG
[J]. PHYSICAL REVIEW, 1962, 127 (01): : 141 - &
[3] TRANSITION PROBABILITY FOR PHOTOELECTRIC EMISSION FROM SEMICONDUCTORS
HUNTINGTON, HB
APKER, L
[J]. PHYSICAL REVIEW, 1953, 89 (02): : 352 - 356
[4] EXTENSION OF MAKINSON THEORY OF PHOTOELECTRIC EMISSION TO A PERIODIC POTENTIAL
HUNTINGTON, HB
[J]. PHYSICAL REVIEW, 1953, 89 (02): : 357 - 358
[5] MACCOLL LA, 1951, BELL SYST TECH J, V30, P588
[6] THE SURFACE PHOTOELECTRIC EFFECT
MAKINSON, REB
[J]. PHYSICAL REVIEW, 1949, 75 (12): : 1908 - 1911
[7] OPTICAL CONSTANTS OF SILICON IN THE REGION 1 TO 10 EV
PHILIPP, HR
TAFT, EA
[J]. PHYSICAL REVIEW, 1960, 120 (01): : 37 - 38
[8] SCHEER JJ, 1961, PHILIPS RES REP, V16, P323