ELECTRON MOBILITIES AND TUNNELING CURRENTS IN SILICON

被引：38

作者：

LOGAN, RA

TRUMBORE, FA

GILBERT, JF

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1961年 / 32卷 / 01期

关键词：

D O I：

10.1063/1.1735949

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：131 / &

共 10 条

[1] INTERNAL FIELD EMISSION AT NARROW SILICON AND GERMANIUM P-N JUNCTIONS [J].

CHYNOWETH, AG ;

FELDMANN, WL ;

LEE, CA ;

LOGAN, RA ;

PEARSON, GL ;

AIGRAIN, P .

PHYSICAL REVIEW, 1960, 118 (02) :425-434

[2] A NEW DEVICE USING THE TUNNELING PROCESS IN NARROW P-N JUNCTIONS [J].

ESAKI, L ;

MIYAHARA, Y .

SOLID-STATE ELECTRONICS, 1960, 1 (01) :13-&

[3] TUNNELING PROBABILITY IN GERMANIUM P-N JUNCTIONS [J].

FURUKAWA, Y .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1960, 15 (04) :730-730

[4]

HALL RN, 1960, BULL AM PHYS SOC S2, V5, P38

[5] DIRECT OBSERVATION OF PHONONS DURING TUNNELING IN NARROW JUNCTION DIODES [J].

HOLONYAK, N ;

LESK, IA ;

HALL, RN ;

TIEMANN, JJ ;

EHRENREICH, H .

PHYSICAL REVIEW LETTERS, 1959, 3 (04) :167-168

[6]

KANE EO, PRIV COMMUNICATIONS

[7]

KELDYSH LV, 1958, SOV PHYS JETP-USSR, V6, P763

[8]

KELDYSH LV, 1958, SOV PHYS JETP-USSR, V7, P665

[9]

MOODY PL, 1960, ESM

[10] ELECTRICAL PROPERTIES OF PURE SILICON AND SILICON ALLOYS CONTAINING BORON AND PHOSPHORUS [J].

PEARSON, GL ;

BARDEEN, J .

PHYSICAL REVIEW, 1949, 75 (05) :865-883

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