A NEW DEVICE USING THE TUNNELING PROCESS IN NARROW P-N JUNCTIONS

[1] CYCLOTRON RESONANCE OF ELECTRONS AND HOLES IN SILICON AND GERMANIUM CRYSTALS [J]. PHYSICAL REVIEW, 1955, 98 (02): : 368 - 384

[2] EBERS JJ, UNPUB P I ELECT B S, V15

[3] NEW PHENOMENON IN NARROW GERMANIUM PARA-NORMAL-JUNCTIONS [J]. PHYSICAL REVIEW, 1958, 109 (02): : 603 - 604

[4] ESAKI L, 1958, IRE WESCON CONVENT 3, P176

[5] ESAKI L, 1959, 1958 INT C SOL STAT

[6] MCAFEE, 1951, PHYS REV, V83, P650

[7] EXCESS NOISE IN NARROW GERMANIUM P-N JUNCTIONS [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1958, 13 (11) : 1281 - 1287

[8] Zener C., 1934, P ROY SOC A, V145, P523, DOI DOI 10.1098/RSPA.1934.0116

[1] CYCLOTRON RESONANCE OF ELECTRONS AND HOLES IN SILICON AND GERMANIUM CRYSTALS [J]. PHYSICAL REVIEW, 1955, 98 (02): : 368 - 384

[2] EBERS JJ, UNPUB P I ELECT B S, V15

[3] NEW PHENOMENON IN NARROW GERMANIUM PARA-NORMAL-JUNCTIONS [J]. PHYSICAL REVIEW, 1958, 109 (02): : 603 - 604

[4] ESAKI L, 1958, IRE WESCON CONVENT 3, P176

[5] ESAKI L, 1959, 1958 INT C SOL STAT

[6] MCAFEE, 1951, PHYS REV, V83, P650

[7] EXCESS NOISE IN NARROW GERMANIUM P-N JUNCTIONS [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1958, 13 (11) : 1281 - 1287

[8] Zener C., 1934, P ROY SOC A, V145, P523, DOI DOI 10.1098/RSPA.1934.0116