P-LAYERS ON VACUUM HEATED SILICON

被引：66

作者：

ALLEN, FG

BUCK, TM

LAW, JT

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1960年 / 31卷 / 06期

关键词：

D O I：

10.1063/1.1735787

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：979 / 985

页数：7

共 19 条

[1]

AHEARN AJ, COMMUNICATION

[2] CLEANING OF SILICON SURFACES BY HEATING IN HIGH VACUUM [J].

ALLEN, FG ;

EISINGER, J ;

HAGSTRUM, HD ;

LAW, JT .

JOURNAL OF APPLIED PHYSICS, 1959, 30 (10) :1563-1571

[3] EMISSIVITY AT 0.65 MICRON OF SILICON AND GERMANIUM AT HIGH TEMPERATURES [J].

ALLEN, FG .

JOURNAL OF APPLIED PHYSICS, 1957, 28 (12) :1510-1511

[4] DIFFUSION OF IMPURITIES INTO EVAPORATING SILICON [J].

BATDORF, RL ;

SMITS, FM .

JOURNAL OF APPLIED PHYSICS, 1959, 30 (02) :259-264

[5] EFFECTS OF CERTAIN CHEMICAL TREATMENTS AND AMBIENT ATMOSPHERES ON SURFACE PROPERTIES OF SILICON [J].

BUCK, TM ;

MCKIM, FS .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1958, 105 (12) :709-714

[6] MASS SPECTROGRAPHIC ANALYSIS OF SOLIDS [J].

HANNAY, NB ;

AHEARN, AJ .

ANALYTICAL CHEMISTRY, 1954, 26 (06) :1056-1058

[7] A MASS SPECTROGRAPH FOR THE ANALYSIS OF SOLIDS [J].

HANNAY, NB .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1954, 25 (07) :644-648

[8]

Jaulmes P., 1937, B SOC CHIM, V4, P139

[9] MECHANISM OF THE FORMATION OF DONOR STATES IN HEAT-TREATED SILICON [J].

KAISER, W ;

FRISCH, HL ;

REISS, H .

PHYSICAL REVIEW, 1958, 112 (05) :1546-1554

[10]

Lawrence H., COMMUNICATION

← 1 2 →