P-LAYERS ON VACUUM HEATED SILICON

被引：66

作者：

ALLEN, FG

BUCK, TM

LAW, JT

机构：

来源：

关键词：

D O I：

10.1063/1.1735787

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：979 / 985

页数：7

共 19 条

[11] GASEOUS MOLECULES OF GEOCHEMICAL SIGNIFICANCE [J].

MARGRAVE, JL .

[12] ELECTRICAL PROPERTIES OF SILICON CONTAINING ARSENIC AND BORON [J].

MORIN, FJ ;

MAITA, JP .

PHYSICAL REVIEW, 1954, 96 (01) :28-35

[13] FORMATION OF JUNCTION STRUCTURES BY SOLID-STATE DIFFUSION [J].

SMITS, FM .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1958, 46 (06) :1049-1061

[14] MEASUREMENT OF SHEET RESISTIVITIES WITH THE 4-POINT PROBE [J].

SMITS, FM .

BELL SYSTEM TECHNICAL JOURNAL, 1958, 37 (03) :711-718

[15] VAPORIZATION OF INORGANIC SUBSTANCES - B2O3, TEO2 AND MG3N2 [J].

SOULEN, JR ;

STHAPITANONDA, P ;

MARGRAVE, JL .

[16]

THEURER HC, 1959, SEMICONDUCTORS, P121

[17] RESISTIVITY MEASUREMENTS ON GERMANIUM FOR TRANSISTORS [J].

VALDES, LB .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1954, 42 (02) :420-427

[18]

von Stackelberg M, 1937, Z ELKTROCHEM ANGEW P, V43, P14

[19]

WOLFSTIRN K, UNPUB J PHYS CHEM SO