DIFFUSION OF IMPURITIES INTO EVAPORATING SILICON

[1] EVALUATION OF THE SURFACE CONCENTRATION OF DIFFUSED LAYERS IN SILICON [J]. BELL SYSTEM TECHNICAL JOURNAL, 1958, 37 (03): : 699 - 710

[2] BEMSKI G, UNPUBLISHED

[3] THE USE OF AN INTERFERENCE MICROSCOPE FOR MEASUREMENT OF EXTREMELY THIN SURFACE LAYERS [J]. BELL SYSTEM TECHNICAL JOURNAL, 1956, 35 (05): : 1209 - 1221

[4] CORNLISON B, 1957, I RADIO ENG WESCON 3, P22

[5] Davis R.E, 1957, United States Patent, Patent No. [2,792,317, 2792317]

[6] DUSHMAN S, 1949, SCI F VACUUM TECHNIQ, pCH1

[7] SURFACE PROTECTION AND SELECTIVE MASKING DURING DIFFUSION IN SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1957, 104 (09) : 547 - 552

[8] FROSCH CJ, 1958, TRANSISTOR TECHNOLOG, V3, pCH3

[9] DIFFUSION OF DONOR AND ACCEPTOR ELEMENTS IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1956, 27 (05) : 544 - 553

[10] DIFFUSION OF BORON AND PHOSPHORUS INTO SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1954, 25 (11) : 1439 - 1440

[1] EVALUATION OF THE SURFACE CONCENTRATION OF DIFFUSED LAYERS IN SILICON [J]. BELL SYSTEM TECHNICAL JOURNAL, 1958, 37 (03): : 699 - 710

[2] BEMSKI G, UNPUBLISHED

[3] THE USE OF AN INTERFERENCE MICROSCOPE FOR MEASUREMENT OF EXTREMELY THIN SURFACE LAYERS [J]. BELL SYSTEM TECHNICAL JOURNAL, 1956, 35 (05): : 1209 - 1221

[4] CORNLISON B, 1957, I RADIO ENG WESCON 3, P22

[5] Davis R.E, 1957, United States Patent, Patent No. [2,792,317, 2792317]

[6] DUSHMAN S, 1949, SCI F VACUUM TECHNIQ, pCH1

[7] SURFACE PROTECTION AND SELECTIVE MASKING DURING DIFFUSION IN SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1957, 104 (09) : 547 - 552

[8] FROSCH CJ, 1958, TRANSISTOR TECHNOLOG, V3, pCH3

[9] DIFFUSION OF DONOR AND ACCEPTOR ELEMENTS IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1956, 27 (05) : 544 - 553

[10] DIFFUSION OF BORON AND PHOSPHORUS INTO SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1954, 25 (11) : 1439 - 1440