ORIENTATION DEPENDENCE OF BUILT-IN SURFACE CHARGE ON THERMALLY OXIDIZED SILICON

被引：42

作者：

BALK, P

BURKHARD.PJ

GREGOR, LV

机构：

来源：

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS | 1965年 / 53卷 / 12期

关键词：

D O I：

10.1109/PROC.1965.4513

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：2133 / &

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共 9 条

[1] EFFECT OF LOW TEMPERATURE ANNEALING ON SURFACE CONDUCTIVITY OF SI IN SI-SIO2-AL SYSTEM
CHEROFF, G
FANG, F
HOCHBERG, F
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (04) : 416 - &
[2] THE OXIDATION OF SILICON IN DRY OXYGEN, WET OXYGEN, AND STEAM
DEAL, BE
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (06) : 527 - 533
[3] DELORD JF, 1965, B AMER PHYS SOC, V10, P596
[4] STABILIZATION OF SIO2 PASSIVATION LAYERS WITH P2O5
KERR, DR
LOGAN, JS
BURKHARDT, PJ
PLISKIN, WA
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (04) : 376 - &
[5] EFFECT OF TEMPERATURE + BIAS ON GLASS-SILICON INTERFACES
KERR, DR
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (04) : 385 - &
[6] CHEMICAL + AMBIENT EFFECTS ON SURFACE CONDUCTION IN PASSIVATED SILICON SEMICONDUCTORS
LEHMAN, HS
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (04) : 422 - &
[7] THE MECHANISMS FOR SILICON OXIDATION IN STEAM AND OXYGEN
LIGENZA, JR
SPITZER, WG
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 14 : 131 - 136
[8] NONDESTRUCTIVE DETERMINATION OF THICKNESS + REFRACTIVE INDEX OF TRANSPARENT FILMS
PLISKIN, WA
CONRAD, EE
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (01) : 43 - &
[9] PLISKIN WA, TO BE PUBLISHED