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CHEMICAL + AMBIENT EFFECTS ON SURFACE CONDUCTION IN PASSIVATED SILICON SEMICONDUCTORS
被引:17
作者
:
LEHMAN, HS
论文数:
0
引用数:
0
h-index:
0
LEHMAN, HS
机构
:
来源
:
IBM JOURNAL OF RESEARCH AND DEVELOPMENT
|
1964年
/ 8卷
/ 04期
关键词
:
D O I
:
10.1147/rd.84.0422
中图分类号
:
TP3 [计算技术、计算机技术];
学科分类号
:
0812 ;
摘要
:
引用
收藏
页码:422 / &
相关论文
共 9 条
[1]
STABILIZATION OF SILICON SURFACES BY THERMALLY GROWN OXIDES
ATALLA, MM
论文数:
0
引用数:
0
h-index:
0
ATALLA, MM
TANNENBAUM, E
论文数:
0
引用数:
0
h-index:
0
TANNENBAUM, E
SCHEIBNER, EJ
论文数:
0
引用数:
0
h-index:
0
SCHEIBNER, EJ
[J].
BELL SYSTEM TECHNICAL JOURNAL,
1959,
38
(03):
: 749
-
783
[2]
EFFECT OF LOW TEMPERATURE ANNEALING ON SURFACE CONDUCTIVITY OF SI IN SI-SIO2-AL SYSTEM
CHEROFF, G
论文数:
0
引用数:
0
h-index:
0
CHEROFF, G
FANG, F
论文数:
0
引用数:
0
h-index:
0
FANG, F
HOCHBERG, F
论文数:
0
引用数:
0
h-index:
0
HOCHBERG, F
[J].
IBM JOURNAL OF RESEARCH AND DEVELOPMENT,
1964,
8
(04)
: 416
-
&
[3]
JORDAN EL, 1960, MAY CHIC M EL SOC
[4]
EFFECT OF TEMPERATURE + BIAS ON GLASS-SILICON INTERFACES
KERR, DR
论文数:
0
引用数:
0
h-index:
0
KERR, DR
[J].
IBM JOURNAL OF RESEARCH AND DEVELOPMENT,
1964,
8
(04)
: 385
-
&
[5]
PERRI JA, 1961, OCT EL SOC DET
[6]
PLISKIN WA, 1964, JUL EL TECH
[7]
ANODIC FORMATION OF OXIDE FILMS ON SILICON
SCHMIDT, PF
论文数:
0
引用数:
0
h-index:
0
SCHMIDT, PF
MICHEL, W
论文数:
0
引用数:
0
h-index:
0
MICHEL, W
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1957,
104
(04)
: 230
-
236
[8]
ELECTROCHEMICAL PHENOMENA IN THIN FILMS OF SILICON DIOXIDE ON SILICON
SERAPHIM, DP
论文数:
0
引用数:
0
h-index:
0
SERAPHIM, DP
BRENNEMANN, AE
论文数:
0
引用数:
0
h-index:
0
BRENNEMANN, AE
FRIEDMAN, HL
论文数:
0
引用数:
0
h-index:
0
FRIEDMAN, HL
DHEURLE, FM
论文数:
0
引用数:
0
h-index:
0
DHEURLE, FM
[J].
IBM JOURNAL OF RESEARCH AND DEVELOPMENT,
1964,
8
(04)
: 400
-
+
[9]
SPACE-CHARGE MODEL FOR SURFACE POTENTIAL SHIFTS IN SILICON PASSIVATED WITH THIN INSULATING LAYERS
THOMAS, JE
论文数:
0
引用数:
0
h-index:
0
THOMAS, JE
YOUNG, DR
论文数:
0
引用数:
0
h-index:
0
YOUNG, DR
[J].
IBM JOURNAL OF RESEARCH AND DEVELOPMENT,
1964,
8
(04)
: 368
-
+
←
1
→
共 9 条
[1]
STABILIZATION OF SILICON SURFACES BY THERMALLY GROWN OXIDES
ATALLA, MM
论文数:
0
引用数:
0
h-index:
0
ATALLA, MM
TANNENBAUM, E
论文数:
0
引用数:
0
h-index:
0
TANNENBAUM, E
SCHEIBNER, EJ
论文数:
0
引用数:
0
h-index:
0
SCHEIBNER, EJ
[J].
BELL SYSTEM TECHNICAL JOURNAL,
1959,
38
(03):
: 749
-
783
[2]
EFFECT OF LOW TEMPERATURE ANNEALING ON SURFACE CONDUCTIVITY OF SI IN SI-SIO2-AL SYSTEM
CHEROFF, G
论文数:
0
引用数:
0
h-index:
0
CHEROFF, G
FANG, F
论文数:
0
引用数:
0
h-index:
0
FANG, F
HOCHBERG, F
论文数:
0
引用数:
0
h-index:
0
HOCHBERG, F
[J].
IBM JOURNAL OF RESEARCH AND DEVELOPMENT,
1964,
8
(04)
: 416
-
&
[3]
JORDAN EL, 1960, MAY CHIC M EL SOC
[4]
EFFECT OF TEMPERATURE + BIAS ON GLASS-SILICON INTERFACES
KERR, DR
论文数:
0
引用数:
0
h-index:
0
KERR, DR
[J].
IBM JOURNAL OF RESEARCH AND DEVELOPMENT,
1964,
8
(04)
: 385
-
&
[5]
PERRI JA, 1961, OCT EL SOC DET
[6]
PLISKIN WA, 1964, JUL EL TECH
[7]
ANODIC FORMATION OF OXIDE FILMS ON SILICON
SCHMIDT, PF
论文数:
0
引用数:
0
h-index:
0
SCHMIDT, PF
MICHEL, W
论文数:
0
引用数:
0
h-index:
0
MICHEL, W
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1957,
104
(04)
: 230
-
236
[8]
ELECTROCHEMICAL PHENOMENA IN THIN FILMS OF SILICON DIOXIDE ON SILICON
SERAPHIM, DP
论文数:
0
引用数:
0
h-index:
0
SERAPHIM, DP
BRENNEMANN, AE
论文数:
0
引用数:
0
h-index:
0
BRENNEMANN, AE
FRIEDMAN, HL
论文数:
0
引用数:
0
h-index:
0
FRIEDMAN, HL
DHEURLE, FM
论文数:
0
引用数:
0
h-index:
0
DHEURLE, FM
[J].
IBM JOURNAL OF RESEARCH AND DEVELOPMENT,
1964,
8
(04)
: 400
-
+
[9]
SPACE-CHARGE MODEL FOR SURFACE POTENTIAL SHIFTS IN SILICON PASSIVATED WITH THIN INSULATING LAYERS
THOMAS, JE
论文数:
0
引用数:
0
h-index:
0
THOMAS, JE
YOUNG, DR
论文数:
0
引用数:
0
h-index:
0
YOUNG, DR
[J].
IBM JOURNAL OF RESEARCH AND DEVELOPMENT,
1964,
8
(04)
: 368
-
+
←
1
→